发明授权
US07041539B2 Method for making an island of material confined between electrodes, and application to transistors
失效
用于制造限制在电极之间的材料岛的方法,以及应用于晶体管的方法
- 专利标题: Method for making an island of material confined between electrodes, and application to transistors
- 专利标题(中): 用于制造限制在电极之间的材料岛的方法,以及应用于晶体管的方法
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申请号: US10450966申请日: 2001-12-17
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公开(公告)号: US07041539B2公开(公告)日: 2006-05-09
- 发明人: David Fraboulet , Denis Mariolle , Yves Morand
- 申请人: David Fraboulet , Denis Mariolle , Yves Morand
- 申请人地址: FR Paris FR Montrouge
- 专利权人: Commissariat a l'Energie Atomique,STMicroelectronics
- 当前专利权人: Commissariat a l'Energie Atomique,STMicroelectronics
- 当前专利权人地址: FR Paris FR Montrouge
- 代理机构: Thelen Reid & Priest LLP
- 优先权: FR0016488 20001218
- 国际申请: PCT/FR01/04018 WO 20011217
- 国际公布: WO02/50886 WO 20020627
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
A method produces a microstructure comprising an island of material confined between two electrodes forming barriers, the island (30) of material having lateral flanks running parallel to and lateral flanks running perpendicular to the barriers, wherein the lateral flanks of the island are defined by etching of at least one layer (16), called the template layer, and the barriers are formed by damascening. The method includes (a) a first etching of the template layer using a first etching mask having at least one filiform part, and (b) a second etching of the template layer, subsequent to the first etching, using a second etching mask also having at least one filiform part, oriented in a direction forming a non-zero angle with a direction of orientation of the filiform part of the first mask, in the vicinity of the site of formation of the island.
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