发明授权
- 专利标题： Damascene tri-gate FinFET
- 专利标题（中）： 大马士革三栅极FinFET
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申请号： US10754559申请日： 2004-01-12
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公开(公告)号： US07041542B2公开(公告)日： 2006-05-09
- 发明人: Shibly S. Ahmed , Haihong Wang , Bin Yu
- 申请人： Shibly S. Ahmed , Haihong Wang , Bin Yu
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Harrity Snyder, LLP
- 主分类号： H01L21/338
- IPC分类号： H01L21/338
摘要：
A method of forming a fin field effect transistor includes forming a fin and forming a source region adjacent a first end of the fin and a drain region adjacent a second end of the fin. The method further includes forming a dummy gate over the fin and forming a dielectric layer around the dummy gate. The method also includes removing the dummy gate to form a trench in the dielectric layer and forming a metal gate in the trench.
公开/授权文献
- US20050153492A1 Damascene tri-gate FinFET 公开/授权日：2005-07-14
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