发明授权
US07042016B2 Semiconductor optical device, method of forming contact in semiconductor optical device
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半导体光学器件，在半导体光学器件中形成接触的方法
- 专利标题： Semiconductor optical device, method of forming contact in semiconductor optical device
- 专利标题（中）： 半导体光学器件，在半导体光学器件中形成接触的方法
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申请号： US10808158申请日： 2004-03-23
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公开(公告)号： US07042016B2公开(公告)日： 2006-05-09
- 发明人: Takao Nakamura , Hiroki Mori , Koji Katayama
- 申请人： Takao Nakamura , Hiroki Mori , Koji Katayama
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 代理机构： Fish & Richardson P.C.
- 优先权： JPP2003-362171 20031022
- 主分类号： H01L27/15
- IPC分类号： H01L27/15
摘要：
A semiconductor optical device comprises a superlattice contact semiconductor region and a metal electrode. The superlattice contact semiconductor region has a superlattice structure. The superlattice contact semiconductor region includes a II–VI compound semiconductor region and a II–VI compound semiconductor layer. The II–VI compound semiconductor region contains zinc, selenium and tellurium, and the II–VI compound semiconductor layer contains zinc and selenium. The metal electrode is provided on said superlattice contact semiconductor region and the metal electrode is electrically bonded to the first II–VI compound semiconductor layer.
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