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US07042786B2 Memory with adjustable access time 失效
内存可调存取时间

Memory with adjustable access time
摘要:
A memory comprising a memory array, an address buffer configured to receive an external address, a refresh address counter configured to generate a refresh address, a first circuit configured to detect a distance between the external address and refresh address, and a second circuit configured to generate at least one timing signal for accessing data associated with the external address from the memory array in response to the distance is provided.
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