Invention Grant
- Patent Title: Process for the constrained sintering of asymmetrically configured dielectric layers
- Patent Title (中): 用于非对称构造的电介质层的约束烧结的方法
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Application No.: US10850878Application Date: 2004-05-21
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Publication No.: US07048993B2Publication Date: 2006-05-23
- Inventor: Carl B. Wang , Kenneth Warren Hang , Christopher R. Needes
- Applicant: Carl B. Wang , Kenneth Warren Hang , Christopher R. Needes
- Applicant Address: US DE Wilmington
- Assignee: E. I. du Pont de Nemours and Company
- Current Assignee: E. I. du Pont de Nemours and Company
- Current Assignee Address: US DE Wilmington
- Main IPC: B32B3/00
- IPC: B32B3/00

Abstract:
A method to produce a distortion-free asymmetrical low-temperature co-fired ceramic structure comprising at least one layer of glass-containing internal constraining tape and at least one layer of glass-containing primary tape wherein the internal constraining tape and the primary tape are laminated to form an asymmetrical laminate and wherein a release layer is deposited on at least one surface of the laminate forming an assembly, wherein the surface is opposite the position of greatest asymmetry of the laminated layers and wherein the assembly is thermally processed producing a structure exhibiting an interactive suppression of x,y shrinkage.
Public/Granted literature
- US20050008874A1 Process for the constrained sintering of asymmetrically configured dielectric layers Public/Granted day:2005-01-13
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