发明授权
- 专利标题： Surface passivation of GaN devices in epitaxial growth chamber
- 专利标题（中）： 外延生长室中GaN器件的表面钝化
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申请号： US10689980申请日： 2003-10-20
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公开(公告)号： US07052942B1公开(公告)日： 2006-05-30
- 发明人: Joseph Smart , David Grider , Shawn Gibb , Brook Hosse , Jeffrey Shealy
- 申请人： Joseph Smart , David Grider , Shawn Gibb , Brook Hosse , Jeffrey Shealy
- 申请人地址： US NC Greensboro
- 专利权人： RF Micro Devices, Inc.
- 当前专利权人： RF Micro Devices, Inc.
- 当前专利权人地址： US NC Greensboro
- 代理机构： Withrow & Terranova, PLLC
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L21/338 ; H01L31/0328
摘要：
The present invention relates to passivation of a gallium nitride (GaN) structure before the GaN structure is removed from an epitaxial growth chamber. The GaN structure includes one or more structural epitaxial layers deposited on a substrate, and the passivation layer deposited on the structural epitaxial layers. In general, the passivation layer is a dielectric material deposited on the GaN structure that serves to passivate surface traps on the surface of the structural epitaxial layers. Preferably, the passivation layer is a dense, thermally deposited silicon nitride passivation layer.
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