- 专利标题: Method for fabricating semiconductor integrated circuit device
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申请号: US11132306申请日: 2005-05-19
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公开(公告)号: US07053007B2公开(公告)日: 2006-05-30
- 发明人: Yoshikazu Tanabe , Satoshi Sakai , Nobuyoshi Natsuaki
- 申请人: Yoshikazu Tanabe , Satoshi Sakai , Nobuyoshi Natsuaki
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout and Kraus, LLP.
- 优先权: JP9-50781 19970305
- 主分类号: H01L21/31
- IPC分类号: H01L21/31
摘要:
A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.