Invention Grant
- Patent Title: Semiconductor device and production method therefor
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US10839334Application Date: 2004-05-06
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Publication No.: US07053494B2Publication Date: 2006-05-30
- Inventor: Toshiharu Seko
- Applicant: Toshiharu Seko
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Nixon & Vanderhye P.C.
- Priority: JP2003-139023 20030516
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L29/40

Abstract:
A semiconductor device includes a film substrate having an interconnection pattern provided on a surface thereof, a semiconductor chip mounted on the film substrate and having an electrode provided on a surface thereof, and an insulative resin portion provided between the film substrate and the semiconductor chip, the resin portion having been formed by applying an insulative resin on at least one of the film substrate and the semiconductor chip and filling a space defined between the film substrate and the semiconductor chip with the resin when the semiconductor chip is mounted on the film substrate, wherein the interconnection pattern has a projection which has a sectional shape tapered toward the electrode of the semiconductor chip and intrudes in the electrode thereby to be electrically connected to the electrode.
Public/Granted literature
- US20040227256A1 Semiconductor device and production method therefor Public/Granted day:2004-11-18
Information query
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