Invention Grant
- Patent Title: SOI sense amplifier with cross-coupled body terminal
- Patent Title (中): 具有交叉耦合体端子的SOI读出放大器
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Application No.: US10852863Application Date: 2004-05-25
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Publication No.: US07053668B2Publication Date: 2006-05-30
- Inventor: Takaaki Nakazato , Toru Asano , Osamu Takahashi , Sang Dhong
- Applicant: Takaaki Nakazato , Toru Asano , Osamu Takahashi , Sang Dhong
- Applicant Address: JP Tokyo US NY Armonk
- Assignee: Kabushiki Kaisha Toshiba,International Business Machines Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,International Business Machines Corporation
- Current Assignee Address: JP Tokyo US NY Armonk
- Agency: Law Offices of Mark L. Berrier
- Main IPC: G01R19/00
- IPC: G01R19/00 ; G11C7/00 ; H03F3/45

Abstract:
Systems and methods for increasing the amount of current that can flow through the data line pull-down transistors in a sense amplifier by tying the bodies of these transistors to a voltage other than ground. In one embodiment, the bodies of the data line pull-down transistors in a sense amplifier are tied to the intermediate nodes on the opposing side of the sense amplifier to increase the current flow through the data line pull-down transistors, and also to reduce the voltage at the intermediate node that will be pulled low by the action of the bit line transistors. In one embodiment, the sense amplifier also includes pre-charge circuits which pre-charge the intermediate nodes to a predetermined voltage that is not reduced by the threshold voltage of the pull-down transistors.
Public/Granted literature
- US20050264324A1 SOI sense amplifier with cross-coupled body terminal Public/Granted day:2005-12-01
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