发明授权
US07053730B2 Fabricating methods for air-gap type FBARs and duplexers including securing a resonating part substrate to a cavity forming substrate
有权
气隙式FBAR和双工器的制造方法,包括将谐振部分基板固定到腔形成基板
- 专利标题: Fabricating methods for air-gap type FBARs and duplexers including securing a resonating part substrate to a cavity forming substrate
- 专利标题(中): 气隙式FBAR和双工器的制造方法,包括将谐振部分基板固定到腔形成基板
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申请号: US10825608申请日: 2004-04-16
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公开(公告)号: US07053730B2公开(公告)日: 2006-05-30
- 发明人: Yun-kwon Park , In-sang Song , Byeoung-ju Ha , Il-jong Song , Duck-hwan Kim
- 申请人: Yun-kwon Park , In-sang Song , Byeoung-ju Ha , Il-jong Song , Duck-hwan Kim
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Lee & Morse, P.C.
- 优先权: KR10-2003-0024720 20030418; KR2003-49918 20030721
- 主分类号: H03H9/70
- IPC分类号: H03H9/70 ; H03H3/007 ; H03H9/10
摘要:
An air-gap type film bulk acoustic resonator (FBAR) is created by securing two substrate parts, one providing a resonance structure and the other providing a separation structure, i.e., a cavity. When the two substrate parts are secured, the resonance structure is over the cavity, forming an air gap isolating the resonant structure from the support substrate. The FBAR may be used to form a duplexer, which includes a plurality of resonance structures, a corresponding plurality of cavities, and an isolation part formed between the cavities. The separate creation of the resonance structures and the cavities both simplifies processing and allows additional elements to be readily integrated in the cavities.