发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US11009449申请日： 2004-12-13
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公开(公告)号： US07054214B2公开(公告)日： 2006-05-30
- 发明人: Satoru Hanzawa , Takeshi Sakata
- 申请人： Satoru Hanzawa , Takeshi Sakata
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Mattingly, Stanger,Malur & Brundidge, P.C.
- 优先权： JP2000-364543 20001127
- 主分类号： G11C7/02
- IPC分类号： G11C7/02
摘要：
A dummy cell includes a plurality of first memory cells MC for storing “1” or “0”, arranged at points of intersection between a plurality of word lines WR0 to WR7 and a plurality of first data lines D0 to D7, a plurality of first dummy cells MCH for storing “1” or “0”, arranged at points of intersection between the word lines WR0 to WR7 and a first dummy data line, and a plurality of second dummy cells MCL for storing “0”, arranged at points of intersection between the word lines WR0 to WR7 and a second dummy data line DD1.
公开/授权文献
- US20050105326A1 Semiconductor device 公开/授权日：2005-05-19
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