Invention Grant
- Patent Title: Semiconductor integrated circuit device and method for testing the same
- Patent Title (中): 半导体集成电路器件及其测试方法
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Application No.: US10928366Application Date: 2004-08-30
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Publication No.: US07057956B2Publication Date: 2006-06-06
- Inventor: Masanori Shirahama , Masashi Agata , Toshiaki Kawasaki , Ryuji Nishihara
- Applicant: Masanori Shirahama , Masashi Agata , Toshiaki Kawasaki , Ryuji Nishihara
- Applicant Address: JP Osaka
- Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2003-308613 20030901
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A semiconductor integrated circuit device includes: first and second nonvolatile memory elements; a first amplifier for amplifying an output signal from the first nonvolatile memory element to output the amplified signal; and a second amplifier for outputting to the first amplifier a control signal generated by amplifying an output signal from the second nonvolatile memory element. The second amplifier fixes the output signal from the first amplifier at a high potential or a low potential based on data stored in the second nonvolatile memory element.
Public/Granted literature
- US20050047236A1 Semiconductor integrated circuit device and method for testing the same Public/Granted day:2005-03-03
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