发明授权
US07057959B2 Semiconductor memory having mode register access in burst mode
有权
半导体存储器在突发模式下具有模式寄存器访问
- 专利标题： Semiconductor memory having mode register access in burst mode
- 专利标题（中）： 半导体存储器在突发模式下具有模式寄存器访问
-
申请号： US11001619申请日： 2004-12-02
-
公开(公告)号： US07057959B2公开(公告)日： 2006-06-06
- 发明人: Shinya Fujioka , Shinichi Yamada , Kotoku Sato , Jun Ohno
- 申请人： Shinya Fujioka , Shinichi Yamada , Kotoku Sato , Jun Ohno
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Arent Fox PLLC
- 优先权： JP2002-268975 20020913
- 主分类号： G11C7/22
- IPC分类号： G11C7/22 ; G11C5/14
摘要：
A method for controlling a semiconductor memory in which a mode register can be set in a burst mode. To set an operation mode in the burst mode, the semiconductor memory is changed first from the burst mode, through a power-down mode, to a standby mode of non-burst mode. Then the semiconductor memory is changed to a mode register set mode to set the mode register when commands are input in the same predetermined sequence that is used in the non-burst mode.
公开/授权文献
- US20050094480A1 Semiconductor memory and method for controlling the same 公开/授权日：2005-05-05