发明授权
- 专利标题： Method of forming dummy wafer
- 专利标题（中）： 形成虚设晶圆的方法
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申请号： US10667511申请日： 2003-09-23
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公开(公告)号： US07060622B2公开(公告)日： 2006-06-13
- 发明人: Yuichiro Miyamori , Munenori Hidaka , Masashi Yoshida
- 申请人： Yuichiro Miyamori , Munenori Hidaka , Masashi Yoshida
- 申请人地址： JP Tokyo
- 专利权人： Oki Electric Industry Co., Ltd.
- 当前专利权人： Oki Electric Industry Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Rabin & Berdo, PC
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
According to the present invention, a dummy wafer is formed by forming a masking film on a rear surface of a silicon wafer; spray coating aluminum and depositing an aluminum film on a front surface of the silicon wafer; spray coating ceramics or carbon and depositing a ceramic film or carbon film on the aluminum film so that the aluminum film may be completely covered; and removing the masking film formed on the rear surface. Also, a dummy wafer can be formed by using an aluminum wafer as a wafer substrate and subjecting it to anodic oxidation to form a film of aluminum oxide.
公开/授权文献
- US20040063324A1 Method of forming dummy wafer 公开/授权日：2004-04-01
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