Invention Grant
US07063986B2 Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and ferromagnetic semiconductor based device
失效
通过等离子体增强分子束外延和基于铁磁半导体的器件生长的室温铁磁半导体
- Patent Title: Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and ferromagnetic semiconductor based device
- Patent Title (中): 通过等离子体增强分子束外延和基于铁磁半导体的器件生长的室温铁磁半导体
-
Application No.: US10910745Application Date: 2004-08-03
-
Publication No.: US07063986B2Publication Date: 2006-06-20
- Inventor: Woo Young Lee , Suk Hee Han , Joon Yeon Chang , Hi Jung Kim , Jung Mi Lee , Jae Min Myoung
- Applicant: Woo Young Lee , Suk Hee Han , Joon Yeon Chang , Hi Jung Kim , Jung Mi Lee , Jae Min Myoung
- Applicant Address: KR Seoul
- Assignee: Korea Institute of Science and Technology
- Current Assignee: Korea Institute of Science and Technology
- Current Assignee Address: KR Seoul
- Agency: Darby & Darby
- Priority: KR2002-53306 20020904
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A 3 group–5 group compound ferromagnetic semiconductor, comprising one material ‘A’ selected from the group of Ga, Al and In and one material ‘B’ selected from the group consisting of N and P, wherein one material ‘C’ selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V is doped as a material for substituting the material ‘A’, the compound semiconductor has a single phase as a whole. The ferromagnetic semiconductor can be fabricated by a plasma-enhance molecular beam epitaxy growing method and since it shows the ferromagnetic characteristics at a room temperature, it can be applied as various spin electron devices.
Public/Granted literature
Information query
IPC分类:
