Invention Grant
- Patent Title: Semiconductor substrate surface preparation using high temperature convection heating
- Patent Title (中): 半导体衬底表面制备采用高温对流加热
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Application No.: US10637447Application Date: 2003-08-08
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Publication No.: US07063992B2Publication Date: 2006-06-20
- Inventor: Michael J. Adams , James Healy, Jr. , William H. Howland, Jr.
- Applicant: Michael J. Adams , James Healy, Jr. , William H. Howland, Jr.
- Applicant Address: US PA Pittsburgh
- Assignee: Solid State Measurements, Inc.
- Current Assignee: Solid State Measurements, Inc.
- Current Assignee Address: US PA Pittsburgh
- Agency: The Webb Law Firm
- Main IPC: H01L21/66
- IPC: H01L21/66
Abstract:
A method of processing a semiconductor wafer includes utilizing a heated gas to heat at least one part of a semiconductor wafer by convection whereupon at least one contaminant is desorbed therefrom. A stream of cooling gas is caused to pass over the one part of the semiconductor wafer in the absence of heated gas to cool the one part of the semiconductor wafer. A metrology tool is then caused to measure at least one part of the semiconductor wafer to determine at least one characteristic thereof.
Public/Granted literature
- US20050028836A1 Semiconductor substrate surface preparation using high temperature convection heating Public/Granted day:2005-02-10
Information query
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