公开(公告)号：US07063992B2

公开(公告)日：2006-06-20

申请号：US10637447

申请日：2003-08-08

Applicant: Michael J. Adams ,  James Healy, Jr. ,  William H. Howland, Jr.

Inventor： Michael J. Adams ,  James Healy, Jr. ,  William H. Howland, Jr.

IPC: H01L21/66

CPC classification number: H01L21/67253 ,  H01L21/67109 ,  Y10S438/928

Abstract: A method of processing a semiconductor wafer includes utilizing a heated gas to heat at least one part of a semiconductor wafer by convection whereupon at least one contaminant is desorbed therefrom. A stream of cooling gas is caused to pass over the one part of the semiconductor wafer in the absence of heated gas to cool the one part of the semiconductor wafer. A metrology tool is then caused to measure at least one part of the semiconductor wafer to determine at least one characteristic thereof.

Abstract translation: 一种处理半导体晶片的方法包括利用加热的气体来通过对流加热至少一部分半导体晶片，因此至少一种污染物从其脱离。 在没有加热气体的情况下使冷却气体流过半导体晶片的一部分，以冷却半导体晶片的一部分。 然后使计量工具测量半导体晶片的至少一部分，以确定其至少一个特性。