发明授权
US07064023B2 D/A converter circuit, semiconductor device incorporating the D/A converter circuit, and manufacturing method of them
失效
D / A转换器电路，并入D / A转换电路的半导体器件及其制造方法
- 专利标题： D/A converter circuit, semiconductor device incorporating the D/A converter circuit, and manufacturing method of them
- 专利标题（中）： D / A转换器电路，并入D / A转换电路的半导体器件及其制造方法
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申请号： US10823745申请日： 2004-04-14
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公开(公告)号： US07064023B2公开(公告)日： 2006-06-20
- 发明人: Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kazuhiko Miyata
- 申请人： Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kazuhiko Miyata
- 申请人地址： JP Kanagawa-ken JP Osaka
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Kanagawa-ken JP Osaka
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2003-108667 20030414
- 主分类号： H01L21/84
- IPC分类号： H01L21/84
摘要：
D/A conversion having higher accuracy is provided by improving relative accuracy of the resistance value of resistors which configure a resistor string. A manufacturing method of a D/A converter circuit of the invention comprises the steps of: forming a resistor string 11 which includes a plurality of resistors R0 to R7 connected in series with each other between reference voltages, and a plurality of switching elements S0 to S3 connected with each connection node of the resistors R0 to R7, wherein: each of the resistors R0 to R7 is a thin film element crystallized by linear laser irradiation; disposing all forming parts of the resistors configuring the resistor string 11 within a laser irradiation area 19; and crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with the same laser shot.
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