公开(公告)号：US07884788B2

公开(公告)日：2011-02-08

申请号：US10902793

申请日：2004-08-02

申请人： Kazuhiko Miyata ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi

发明人： Kazuhiko Miyata ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi

IPC分类号： G09G3/36

CPC分类号： G09G3/3685 ,  G09G2310/027

摘要： A liquid crystal display device provided with an audio signal processing function, which includes an audio signal processing circuit with a large S/N ratio and a small glitch is provided. The display device of the invention includes a resistor string D/A converter circuit whose dynamic range can be increased by using a common power supply for a D/A converter circuit and a signal line driver circuit. Accordingly, a glitch generated in the D/A converter circuit can be reduced relatively to an audio signal and an S/N ratio of the D/A converted signal can thus be increased.

摘要翻译： 提供具有音频信号处理功能的液晶显示装置，其包括具有大的S / N比和小毛刺的音频信号处理电路。 本发明的显示装置包括电阻串D / A转换电路，其动态范围可以通过使用用于D / A转换器电路和信号线驱动电路的公共电源来增加。 因此，可以相对于音频信号减小在D / A转换器电路中产生的毛刺，从而可以增加D / A转换信号的S / N比。

公开(公告)号：US07769190B2

公开(公告)日：2010-08-03

申请号：US10821848

申请日：2004-04-12

申请人： Kazuhiko Miyata ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi

发明人： Kazuhiko Miyata ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi

IPC分类号： H04R3/00

CPC分类号： H01C7/006 ,  G02F1/13452 ,  H01G4/40 ,  H05K1/189 ,  H05K3/361 ,  H05K2201/10136

摘要： An audio signal processing circuit for processing an audio signal which is compact and small is provided. For the audio signal processing circuit of the invention, an input circuit, a feedback circuit, and a smoothing circuit are formed using a chip capacitor with small mounting space and a thin film resistor on an insulating substrate. Accordingly, the audio signal processing circuit that is small and further a display device incorporating the audio signal processing circuit are provided.

摘要翻译： 提供一种用于处理紧凑而小的音频信号的音频信号处理电路。 对于本发明的音频信号处理电路，在绝缘基板上使用安装空间小的片式电容器和薄膜电阻器形成输入电路，反馈电路和平滑电路。 因此，提供了一种较小的音频信号处理电路，并且还提供了包括音频信号处理电路的显示装置。

公开(公告)号：US07750899B2

公开(公告)日：2010-07-06

申请号：US12404418

申请日：2009-03-16

申请人： Kazuhiko Miyata ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Takeshi Osada

发明人： Kazuhiko Miyata ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Takeshi Osada

IPC分类号： G06F3/038

CPC分类号： G02F1/13452 ,  G02F1/13454

摘要： The invention provides a liquid crystal display device for displaying an image, having a signal processing function and a narrow frame. In the display device of the invention, a signal processing circuit is formed by thin film elements and at least a portion of the signal processing circuit is formed in the region that extended the region where a wiring connection portion is formed along a side of a substrate. By providing the signal processing circuit outside the sealed region of liquid crystal and the like and utilizing regions beside an FPC connected portion which tended to be a dead space conventionally, a display device having a narrow frame can be provided.

摘要翻译： 本发明提供了一种用于显示具有信号处理功能和窄帧的图像的液晶显示装置。 在本发明的显示装置中，信号处理电路由薄膜元件形成，并且信号处理电路的至少一部分形成在沿基板侧形成布线连接部的区域的区域中 。 通过在液晶等的密封区域的外部设置信号处理电路，并且通常利用往往为静止空间的FPC连接部分旁边的区域，可以提供具有窄框架的显示装置。

公开(公告)号：US20060202241A1

公开(公告)日：2006-09-14

申请号：US11432349

申请日：2006-05-12

申请人： Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kazuhiko Miyata

发明人： Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kazuhiko Miyata

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L27/0802 ,  H01L21/268 ,  H01L28/20 ,  H01L2924/0002 ,  H03M1/685 ,  H03M1/76 ,  H01L2924/00

摘要： D/A conversion having higher accuracy is provided by improving relative accuracy of the resistance value of resistors which configure a resistor string. A manufacturing method of a D/A converter circuit of the invention comprises the steps of: forming a resistor string 11 which includes a plurality of resistors R0 to R7 connected in series with each other between reference voltages, and a plurality of switching elements S0 to S3 connected with each connection node of the resistors R0 to R7, wherein: each of the resistors R0 to R7 is a thin film element crystallized by linear laser irradiation; disposing all forming parts of the resistors configuring the resistor string 11 within a laser irradiation area 19; and crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with the same laser shot.

摘要翻译： 通过提高构成电阻串的电阻器的电阻值的相对精度来提供具有更高精度的D / A转换。 本发明的D / A转换器电路的制造方法包括以下步骤：形成电阻串11，其包括在参考电压之间彼此串联连接的多个电阻器R 0至R 7，以及多个开关元件 S 0〜S 3与电阻R 0〜R 7的各连接节点连接，其中：电阻R 0〜R 7各自为通过线性激光照射而结晶的薄膜元件; 将构成电阻器串11的电阻的所有形成部分设置在激光照射区域19内; 并用相同的激光照射结晶设置在激光照射区域内的电阻器的所有形成部分。

公开(公告)号：US20050030270A1

公开(公告)日：2005-02-10

申请号：US10902793

申请日：2004-08-02

申请人： Kazuhiko Miyata ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi

发明人： Kazuhiko Miyata ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi

IPC分类号： G02F1/133 ,  G09G3/20 ,  G09G3/36 ,  H03M1/08 ,  H03M1/76 ,  H04N5/60 ,  H04N5/63

CPC分类号： G09G3/3685 ,  G09G2310/027

摘要： A liquid crystal display device provided with an audio signal processing function, which includes an audio signal processing circuit with a large S/N ratio and a small glitch is provided. The display device of the invention includes a resistor string D/A converter circuit whose dynamic range can be increased by using a common power supply for a D/A converter circuit and a signal line driver circuit. Accordingly, a glitch generated in the D/A converter circuit can be reduced relatively to an audio signal and an S/N ratio of the D/A converted signal can thus be increased.

摘要翻译： 提供具有音频信号处理功能的液晶显示装置，其包括具有大的S / N比和小毛刺的音频信号处理电路。 本发明的显示装置包括电阻串D / A转换电路，其动态范围可以通过使用用于D / A转换器电路和信号线驱动电路的公共电源来增加。 因此，可以相对于音频信号减小在D / A转换器电路中产生的毛刺，从而可以增加D / A转换信号的S / N比。

公开(公告)号：US20050007330A1

公开(公告)日：2005-01-13

申请号：US10845134

申请日：2004-05-14

申请人： Kazuhiko Miyata ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Takeshi Osada

发明人： Kazuhiko Miyata ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Takeshi Osada

IPC分类号： G02F1/136 ,  G02F1/13 ,  G02F1/1345 ,  G02F1/1362 ,  G09G3/36 ,  H01L29/786

CPC分类号： G02F1/13452 ,  G02F1/13454

摘要： The invention provides a liquid crystal display device for displaying an image, having a signal processing function and a narrow flame. In the display device of the invention, a signal processing circuit is formed by thin film elements and at least a portion of the signal processing circuit is formed in the region that extended the region where a wiring connection portion is formed along a side of a substrate. By providing the signal processing circuit outside the sealed region of liquid crystal and the like and utilizing regions beside an FPC connected portion which tended to be a dead space conventionally, a display device having a narrow frame can be provided.

摘要翻译： 本发明提供了一种用于显示具有信号处理功能和窄火焰的图像的液晶显示装置。 在本发明的显示装置中，信号处理电路由薄膜元件形成，并且信号处理电路的至少一部分形成在沿基板侧形成布线连接部的区域的区域中 。 通过在液晶等的密封区域的外部设置信号处理电路，并且通常利用往往为静止空间的FPC连接部分旁边的区域，可以提供具有窄框架的显示装置。

公开(公告)号：US07615824B2

公开(公告)日：2009-11-10

申请号：US11432349

申请日：2006-05-12

申请人： Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kazuhiko Miyata

发明人： Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kazuhiko Miyata

IPC分类号： H01L23/62

CPC分类号： H01L27/0802 ,  H01L21/268 ,  H01L28/20 ,  H01L2924/0002 ,  H03M1/685 ,  H03M1/76 ,  H01L2924/00

摘要： D/A conversion having higher accuracy is provided by improving relative accuracy of the resistance value of resistors which configure a resistor string. A manufacturing method of a D/A converter circuit of the invention comprises the steps of: forming a resistor string 11 which includes a plurality of resistors R0 to R7 connected in series with each other between reference voltages, and a plurality of switching elements S0 to S3 connected with each connection node of the resistors R0 to R7, wherein: each of the resistors R0 to R7 is a thin film element crystallized by linear laser irradiation; disposing all forming parts of the resistors configuring the resistor string 11 within a laser irradiation area 19; and crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with the same laser shot.

摘要翻译： 通过提高构成电阻串的电阻器的电阻值的相对精度来提供具有更高精度的D / A转换。 本发明的D / A转换器电路的制造方法包括以下步骤：形成电阻串11，其包括在参考电压之间串联连接的多个电阻器R0至R7，以及多个开关元件S0至 S3与电阻器R0至R7的每个连接节点连接，其中：电阻器R0至R7中的每一个是通过线性激光照射而结晶的薄膜元件; 将构成电阻器串11的电阻的所有形成部分设置在激光照射区域19内; 并用相同的激光照射结晶设置在激光照射区域内的电阻器的所有形成部分。

公开(公告)号：US07528827B2

公开(公告)日：2009-05-05

申请号：US10845134

申请日：2004-05-14

申请人： Kazuhiko Miyata ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Takeshi Osada

发明人： Kazuhiko Miyata ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Takeshi Osada

IPC分类号： G06F3/038

CPC分类号： G02F1/13452 ,  G02F1/13454

摘要： The invention provides a liquid crystal display device for displaying an image, having a signal processing function and a narrow flame. In the display device of the invention, a signal processing circuit is formed by thin film elements and at least a portion of the signal processing circuit is formed in the region that extended the region where a wiring connection portion is formed along a side of a substrate. By providing the signal processing circuit outside the sealed region of liquid crystal and the like and utilizing regions beside an FPC connected portion which tended to be a dead space conventionally, a display device having a narrow frame can be provided.

摘要翻译： 本发明提供了一种用于显示具有信号处理功能和窄火焰的图像的液晶显示装置。 在本发明的显示装置中，信号处理电路由薄膜元件形成，并且信号处理电路的至少一部分形成在沿基板侧形成布线连接部的区域的区域中 。 通过在液晶等的密封区域的外部设置信号处理电路，并且通常利用往往为静止空间的FPC连接部分旁边的区域，可以提供具有窄框架的显示装置。

公开(公告)号：US07064023B2

公开(公告)日：2006-06-20

申请号：US10823745

申请日：2004-04-14

申请人： Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kazuhiko Miyata

发明人： Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kazuhiko Miyata

IPC分类号： H01L21/84

CPC分类号： H01L27/0802 ,  H01L21/268 ,  H01L28/20 ,  H01L2924/0002 ,  H03M1/685 ,  H03M1/76 ,  H01L2924/00

摘要： D/A conversion having higher accuracy is provided by improving relative accuracy of the resistance value of resistors which configure a resistor string. A manufacturing method of a D/A converter circuit of the invention comprises the steps of: forming a resistor string 11 which includes a plurality of resistors R0 to R7 connected in series with each other between reference voltages, and a plurality of switching elements S0 to S3 connected with each connection node of the resistors R0 to R7, wherein: each of the resistors R0 to R7 is a thin film element crystallized by linear laser irradiation; disposing all forming parts of the resistors configuring the resistor string 11 within a laser irradiation area 19; and crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with the same laser shot.

摘要翻译： 通过提高构成电阻串的电阻器的电阻值的相对精度来提供具有更高精度的D / A转换。 本发明的D / A转换器电路的制造方法包括以下步骤：形成电阻串11，其包括在参考电压之间串联连接的多个电阻器R 0至R 7，以及多个开关元件 S 0〜S 3与电阻R 0〜R 7的各连接节点连接，其中：电阻R 0〜R 7各自为通过线性激光照射而结晶的薄膜元件; 将构成电阻器串11的电阻的所有形成部分设置在激光照射区域19内; 并用相同的激光照射结晶设置在激光照射区域内的电阻器的所有形成部分。

公开(公告)号：US08421069B2

公开(公告)日：2013-04-16

申请号：US12904579

申请日：2010-10-14

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kouhei Toyotaka ,  Masashi Tsubuku ,  Kosei Noda ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kouhei Toyotaka ,  Masashi Tsubuku ,  Kosei Noda ,  Hideaki Kuwabara

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L29/04 ,  H01L31/00 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L29/7869 ,  H01L21/84 ,  H01L23/552 ,  H01L23/60 ,  H01L23/66 ,  H01L25/16 ,  H01L27/0222 ,  H01L27/10873 ,  H01L27/12 ,  H01L27/1225 ,  H01L28/20 ,  H01L28/60 ,  H01L29/78609 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized.

摘要翻译： 目的是减少用于LSI，CPU或存储器的晶体管的漏电流和寄生电容。 包括在LSI，CPU或存储器中的半导体集成电路使用使用氧化物半导体形成的晶体管来制造，所述氧化物半导体是通过从作为电子给体（供体）中除去作为电子给体（供体）的杂质而获得的内在或本质上的半导体 氧化物半导体，并且具有比硅半导体更大的能隙，并且形成在半导体衬底上。 通过形成在半导体衬底上的晶体管，并且包括具有充分降低的氢浓度的高度净化的氧化物半导体层，可以实现其由漏电流引起的功率消耗低的半导体器件。