发明授权
- 专利标题： Incorporating dopants to enhance the dielectric properties of metal silicates
- 专利标题（中）： 掺入掺杂剂以增强金属硅酸盐的介电性能
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申请号： US10738761申请日： 2003-12-16
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公开(公告)号： US07064062B2公开(公告)日： 2006-06-20
- 发明人: Wai Lo , Verne Hornback , Wilbur G. Catabay , Wei-Jen Hsia , Sey-Shing Sun
- 申请人： Wai Lo , Verne Hornback , Wilbur G. Catabay , Wei-Jen Hsia , Sey-Shing Sun
- 申请人地址： US CA Milpitas
- 专利权人： LSI Logic Corporation
- 当前专利权人： LSI Logic Corporation
- 当前专利权人地址： US CA Milpitas
- 代理机构： Beyer Weaver & Thomas, LLP
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; B05D3/02
摘要：
The present invention provides a method of forming a high-k dielectric layer on a semiconductor wafer. A metal silicate dielectric layer is initially deposited on the wafer. A dopant having dissociable oxygen is introduced into the metal silicate on the wafer. According to one embodiment the metal silicate comprises a group IV metal and the dopant is an oxide of one of an alkaline metal and an alkaline earth metal. According to another embodiment the metal silicate comprises a group III metal.
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