发明授权
- 专利标题： Switching semiconductor device and switching circuit
- 专利标题（中）： 开关半导体器件和开关电路
-
申请号： US10912567申请日： 2004-08-06
-
公开(公告)号： US07064359B2公开(公告)日： 2006-06-20
- 发明人: Hidetoshi Ishida , Tsuyoshi Tanaka , Daisuke Ueda
- 申请人： Hidetoshi Ishida , Tsuyoshi Tanaka , Daisuke Ueda
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2003-296060 20030820
- 主分类号： H01L31/0328
- IPC分类号： H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109
摘要：
A switching semiconductor device includes a first compound layer formed on a single crystal substrate which includes silicon carbide or sapphire, and including a general formula InxGa1-xN, where 0≦x≦1; a second compound layer formed on the first compound layer, and including a general formula InyALzGa1-y-zN, where 0≦y≦1 and 0
公开/授权文献
- US20050051793A1 Switching semiconductor device and switching circuit 公开/授权日：2005-03-10
信息查询
IPC分类:
