发明授权
- 专利标题： Pattern compensation techniques for charged particle lithographic masks
- 专利标题（中）： 带电粒子光刻掩模的图案补偿技术
-
申请号： US10065963申请日： 2002-12-04
-
公开(公告)号： US07067220B2公开(公告)日： 2006-06-27
- 发明人: Michael James Lercel , David Walker
- 申请人： Michael James Lercel , David Walker
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Richard M. Kotulak
- 主分类号： G03F9/00
- IPC分类号： G03F9/00
摘要：
A method of producing a particle beam mask and mask structures to allow for the use of dummy fill shapes. This invention overcomes distortion in by adding a dummy shape in unexposed regions and applying a blocking layer to cover the dummy shape. The blocking layer is comprised of an aperture or additional mask mounted close to the mask or can be added to the mask itself.
公开/授权文献
信息查询
