发明授权
- 专利标题： High-voltage metal-oxide-semiconductor devices and method of making the same
- 专利标题（中）： 高压金属氧化物半导体器件及其制造方法
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申请号： US10908811申请日： 2005-05-26
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公开(公告)号： US07067365B1公开(公告)日： 2006-06-27
- 发明人: Wen-Fang Lee , Wei-Lun Hsu , Yu-Hsien Lin
- 申请人： Wen-Fang Lee , Wei-Lun Hsu , Yu-Hsien Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8238
摘要：
An improved high-voltage process is disclosed. In order to improve the performance in terms of breakdown voltage and to maintain the integrity of the STI structures, the thick gate oxide layer of the high-voltage device area is not etched back before a high-dosage ion doping process. One photo mask is therefore omitted.
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