发明授权
US07067384B1 Method of forming a varactor with an increased linear tuning range
有权
形成具有增加的线性调谐范围的变容二极管的方法
- 专利标题： Method of forming a varactor with an increased linear tuning range
- 专利标题（中）： 形成具有增加的线性调谐范围的变容二极管的方法
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申请号： US10634948申请日： 2003-08-05
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公开(公告)号： US07067384B1公开(公告)日： 2006-06-27
- 发明人: Vladislav Vashchenko , Pascale Francis , Peter J. Hopper
- 申请人： Vladislav Vashchenko , Pascale Francis , Peter J. Hopper
- 申请人地址： US CA Santa Clara
- 专利权人： National Semiconductor Corporation
- 当前专利权人： National Semiconductor Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Mark C. Pickering
- 主分类号： H01L21/18
- IPC分类号： H01L21/18
摘要：
The linear tuning range of a semiconductor varactor is substantially increased by forming a lightly-doped drain region of a first conductivity type in a semiconductor material of a second conductivity type between a heavily-doped diffusion of the second conductivity type and a lower-plate region of the semiconductor material.
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