Invention Grant
- Patent Title: Diamond film and method for producing the same
- Patent Title (中): 金刚石薄膜及其制造方法
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Application No.: US10421562Application Date: 2003-04-23
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Publication No.: US07070650B2Publication Date: 2006-07-04
- Inventor: Hitoshi Noguchi , Yoshihiro Kubota
- Applicant: Hitoshi Noguchi , Yoshihiro Kubota
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Hogan & Hartson LLP
- Priority: JP2002-123920 20020425
- Main IPC: C30B23/00
- IPC: C30B23/00

Abstract:
There is disclosed a method for producing a diamond film on a base material by a vapor phase reaction at least with introducing a raw material gas, wherein B(OCH3)3 gas is added to the raw material gas as a source of boron to be doped, and a diamond film is deposited on the base material by a vapor phase reaction utilizing the mixed raw material gas. There can be provided a method enabling easy and uniform production of a diamond film showing a low electric resistivity value with good reproducibility and few problems concerning handling such as serious bad influence on human bodies and explosiveness during the doping process.
Public/Granted literature
- US20030200914A1 Diamond film and method for producing the same Public/Granted day:2003-10-30
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