发明授权
US07071053B2 Method of forming capacitor with ruthenium top and bottom electrodes by MOCVD
失效
通过MOCVD形成具有钌顶部和底部电极的电容器的方法
- 专利标题： Method of forming capacitor with ruthenium top and bottom electrodes by MOCVD
- 专利标题（中）： 通过MOCVD形成具有钌顶部和底部电极的电容器的方法
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申请号： US10852121申请日： 2004-05-25
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公开(公告)号： US07071053B2公开(公告)日： 2006-07-04
- 发明人: Toshihide Nabatame , Takaaki Suzuki , Tetsuo Fujiwara , Kazutoshi Higashiyama
- 申请人： Toshihide Nabatame , Takaaki Suzuki , Tetsuo Fujiwara , Kazutoshi Higashiyama
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout and Kraus, LLP.
- 优先权： JP10-291906 19981014
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242
摘要：
A semiconductor device containing a dielectric capacitor having an excellent step coverage for a device structure of high aspect ratio corresponding to high integration degree, as well as a manufacturing method therefor are provided. A dielectric capacitor of high integration degree is manufactured by forming a bottom electrode 46 and a top-electrode 48 comprising a homogeneous thin Ru film with 100% step coverage while putting a dielectric 47 therebetween on substrates 44, 45 having a three-dimensional structure with an aspect ratio of 3 or more by a MOCVD process using a cyclopentadienyl complex within a temperature range from 180° C. or higher to 250° C. or lower.
公开/授权文献
- US20040214392A1 Semiconductor device and manufacturing method thereof 公开/授权日：2004-10-28
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