发明授权
US07074676B2 Memory film, method of manufacturing the memory film, memory element, semiconductor storage device, semiconductor integrated circuit, and portable electronic equipment
失效
存储膜，制造存储膜的方法，存储元件，半导体存储器件，半导体集成电路和便携式电子设备
- 专利标题： Memory film, method of manufacturing the memory film, memory element, semiconductor storage device, semiconductor integrated circuit, and portable electronic equipment
- 专利标题（中）： 存储膜，制造存储膜的方法，存储元件，半导体存储器件，半导体集成电路和便携式电子设备
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申请号： US10468738申请日： 2002-02-13
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公开(公告)号： US07074676B2公开(公告)日： 2006-07-11
- 发明人: Hiroshi Iwata , Akihide Shibata , Nobutoshi Arai , Takayuki Ogura , Kouichirou Adachi , Seizo Kakimoto , Yukio Yasuda , Shigeaki Zaima , Akira Sakai
- 申请人： Hiroshi Iwata , Akihide Shibata , Nobutoshi Arai , Takayuki Ogura , Kouichirou Adachi , Seizo Kakimoto , Yukio Yasuda , Shigeaki Zaima , Akira Sakai
- 申请人地址： JP Osaka JP Aichi-Gun JP Kasugai JP Nagoya
- 专利权人： Sharp Kabushiki Kaisha,Yukio Yasuda,Shigeaki Zaima,Akira Sakai
- 当前专利权人： Sharp Kabushiki Kaisha,Yukio Yasuda,Shigeaki Zaima,Akira Sakai
- 当前专利权人地址： JP Osaka JP Aichi-Gun JP Kasugai JP Nagoya
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 优先权： JPP2001-046260 20010222
- 国际申请： PCT/JP02/01185 WO 20020213
- 国际公布： WO02/067336 WO 20020829
- 主分类号： H01L21/8247
- IPC分类号： H01L21/8247 ; H01L29/788
摘要：
A memory film operable at a low voltage and a method of manufacturing the memory film; the method, comprising the steps of forming a first insulation film (112) on a semiconductor substrate (111) forming a first electrode, forming a first conductor film (113) on the first insulation film (112), forming a second insulation film (112B) on the surface of the first conductor film (113), forming a third insulation film containing conductor particulates (114, 115) on the second insulation film (112B), and forming a second conductor film forming a second electrode on the third insulation film.
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