公开(公告)号：US07074676B2

公开(公告)日：2006-07-11

申请号：US10468738

申请日：2002-02-13

申请人： Hiroshi Iwata ,  Akihide Shibata ,  Nobutoshi Arai ,  Takayuki Ogura ,  Kouichirou Adachi ,  Seizo Kakimoto ,  Yukio Yasuda ,  Shigeaki Zaima ,  Akira Sakai

发明人： Hiroshi Iwata ,  Akihide Shibata ,  Nobutoshi Arai ,  Takayuki Ogura ,  Kouichirou Adachi ,  Seizo Kakimoto ,  Yukio Yasuda ,  Shigeaki Zaima ,  Akira Sakai

IPC分类号： H01L21/8247 ,  H01L29/788

CPC分类号： B82Y10/00 ,  H01L21/28273 ,  H01L27/115 ,  H01L29/42332 ,  Y10S438/962

摘要： A memory film operable at a low voltage and a method of manufacturing the memory film; the method, comprising the steps of forming a first insulation film (112) on a semiconductor substrate (111) forming a first electrode, forming a first conductor film (113) on the first insulation film (112), forming a second insulation film (112B) on the surface of the first conductor film (113), forming a third insulation film containing conductor particulates (114, 115) on the second insulation film (112B), and forming a second conductor film forming a second electrode on the third insulation film.

摘要翻译： 以低电压工作的记忆膜和制造该记忆膜的方法; 该方法包括以下步骤：在形成第一电极的半导体衬底（111）上形成第一绝缘膜（112），在第一绝缘膜（112）上形成第一导体膜（113），形成第二绝缘膜（ 112B），在第二绝缘膜（112B）上形成包含导体微粒（114,115）的第三绝缘膜，并在第二绝缘膜（112B）上形成第二导电膜，形成第二电极 第三绝缘膜。

公开(公告)号：US20060011916A1

公开(公告)日：2006-01-19

申请号：US11088766

申请日：2005-03-25

申请人： Akira Sakai ,  Noriyuki Taoka ,  Osamu Nakatsuka ,  Shigeaki Zaima ,  Yukio Yasuda

发明人： Akira Sakai ,  Noriyuki Taoka ,  Osamu Nakatsuka ,  Shigeaki Zaima ,  Yukio Yasuda

IPC分类号： H01L29/12 ,  H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02694

摘要： A substrate for epitaxial growth includes a silicon-containing substrate, a silicon-germanium film, and a network-shaped structure. The silicon-germanium film is formed lamellarly on the silicon-containing substrate. The network-shaped structure is disposed adjacent to an interface between the silicon-containing substrate and the silicon-germanium film, and is composed of a 90-degree-dislocation dislocation line elongating continuously. The 90-degree-dislocation dislocation line making the network-shaped structure elongates remarkably long without being broken to short lengths interruptedly so that the 90-degree dislocation is disposed cyclically in planes parallel to the interface. Accordingly, the 90-degree dislocation is present uniformly in planes parallel to the interface. Consequently, strains in the crystal lattice of the silicon-germanium film have been uniformly relaxed more securely.

摘要翻译： 用于外延生长的衬底包括含硅衬底，硅 - 锗膜和网状结构。 硅 - 锗膜在含硅衬底上层叠形成。 网状结构与含硅基板和硅锗膜之间的界面相邻配置，由连续延伸的90度位错位错线构成。 使网状结构的90度错位错位线显着延长，而不会间断地断裂成短长度，使得90度位错循环地布置在与界面平行的平面中。 因此，90度位错均匀地存在于平行于界面的平面中。 因此，硅 - 锗膜的晶格中的应变已经被更均匀地松弛。

公开(公告)号：US20050189652A1

公开(公告)日：2005-09-01

申请号：US10925976

申请日：2004-08-26

申请人： Osamu Nakatsuka ,  Akira Sakai ,  Shigeaki Zaima ,  Yukio Yasuda ,  Kazuya Okubo ,  Yoshinori Tsuchiya

发明人： Osamu Nakatsuka ,  Akira Sakai ,  Shigeaki Zaima ,  Yukio Yasuda ,  Kazuya Okubo ,  Yoshinori Tsuchiya

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/44 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L21/28518

摘要： A silicon substrate is prepared, and a titanium intermediate layer is formed on the silicon substrate. Then, a compound element-containing layer containing compound elements to compose an intended silicide film is formed on the titanium intermediate layer, to form a multilayered intermediate structure, which is thermally treated to form the intended silicide film made of silicon elements of the silicon substrate and the compound elements of the compound element-containing layer.

摘要翻译： 制备硅衬底，并在硅衬底上形成钛中间层。 然后，在钛中间层上形成含有化合物的复合元素层，构成预定的硅化物膜，形成多层中间结构体，进行热处理，形成由硅基板的硅元素构成的硅化物膜 和含化合物元素层的复合元素。

公开(公告)号：US07030000B2

公开(公告)日：2006-04-18

申请号：US10807235

申请日：2004-03-24

申请人： Akira Sakai ,  Yukio Yasuda ,  Shigeaki Zaima ,  Mitsuo Sakashita ,  Hiroki Kondo ,  Shinsuke Sakashita

发明人： Akira Sakai ,  Yukio Yasuda ,  Shigeaki Zaima ,  Mitsuo Sakashita ,  Hiroki Kondo ,  Shinsuke Sakashita

IPC分类号： H01L21/31 ,  H01L29/772

CPC分类号： H01L21/3247 ,  C30B29/16 ,  C30B33/02 ,  H01L21/28185 ,  H01L21/28194 ,  H01L29/513 ,  H01L29/517 ,  H01L2924/0002 ,  H01L2924/00

摘要： A given metallic oxide film is epitaxially grown on a substrate. Then, the substrate and the metallic oxide film are thermally treated to mix the constituent elements of the substrate with the constituent metallic oxide elements of the metallic oxide film and to form a metallic oxide film of high dielectric constant on the substrate through the mixing of the constituent elements.

摘要翻译： 给定的金属氧化物膜在衬底上外延生长。 然后，对基板和金属氧化物膜进行热处理以将基板的构成元件与金属氧化物膜的构成金属氧化物元件混合，并通过混合该金属氧化物膜而在基板上形成高介电常数的金属氧化物膜 构成要素。

公开(公告)号：US20050087792A1

公开(公告)日：2005-04-28

申请号：US10925966

申请日：2004-08-26

申请人： Hiroki Kondo ,  Yukio Yasuda ,  Shigeaki Zaima ,  Akira Sakai ,  Mitsuo Sakashita ,  Shinya Naito ,  Masaki Satake

发明人： Hiroki Kondo ,  Yukio Yasuda ,  Shigeaki Zaima ,  Akira Sakai ,  Mitsuo Sakashita ,  Shinya Naito ,  Masaki Satake

IPC分类号： C01B33/027 ,  C30B1/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8242 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/76 ,  H01L29/788 ,  H01L29/792

CPC分类号： B82Y10/00 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/0262 ,  H01L29/40114 ,  H01L29/42332

摘要： A silicon oxide layer is formed at a surface region of a silicon substrate. Then, an amorphous silicon layer 13 is formed preferably in a thickness of 1 nm or below on the silicon substrate via the silicon oxide layer. Then, the amorphous silicon layer 13 is exposed to a silane gas preferably with heating the silicon substrate within a temperature range of 400-800° C. to form a high density and minute silicon nanocrystal.

摘要翻译： 在硅衬底的表面区域形成氧化硅层。 然后，通过硅氧化物层，在硅衬底上优选形成1nm以下的非晶硅层13。 然后，非晶硅层13优选在400-800℃的温度范围内加热硅衬底而暴露于硅烷气体，以形成高密度和微小的硅纳米晶体。

公开(公告)号：US09360697B2

公开(公告)日：2016-06-07

申请号：US14344092

申请日：2012-09-06

申请人： Yuichi Iyama ,  Hisashi Watanabe ,  Eiji Satoh ,  Yasushi Asaoka ,  Akira Sakai ,  Akiko Miyazaki

发明人： Yuichi Iyama ,  Hisashi Watanabe ,  Eiji Satoh ,  Yasushi Asaoka ,  Akira Sakai ,  Akiko Miyazaki

IPC分类号： G02F1/1339 ,  G02F1/1335 ,  G02F1/1337

CPC分类号： G02F1/133512 ,  G02F1/133528 ,  G02F1/1337 ,  G02F2001/13356

摘要： A liquid crystal display panel (100A) according to an embodiment of the present invention is a liquid crystal display panel including: a first substrate (2) having a pixel electrode (4) formed thereon; a second substrate (3) opposing the first substrate (2); and a liquid crystal layer (1) retained between the first substrate (2) and the second substrate (3). The liquid crystal layer (1) edges near at least one of side faces of the liquid crystal display panel (100A), and includes a black layer (52) in contact with the side face of the liquid crystal layer (1) along which the liquid crystal layer (1) edges near at least one of the side faces of the liquid crystal display panel (100A).

摘要翻译： 根据本发明实施例的液晶显示面板（100A）是液晶显示面板，包括：形成有像素电极（4）的第一基板（2） 与所述第一基板（2）相对的第二基板（3）; 和保持在第一基板（2）和第二基板（3）之间的液晶层（1）。 液晶层（1）在液晶显示面板（100A）的至少一个侧面附近形成边缘，并且包括与液晶层（1）的侧面接触的黑色层（52） 在液晶显示面板（100A）的至少一个侧面附近形成液晶层（1）。

公开(公告)号：US09104037B2

公开(公告)日：2015-08-11

申请号：US13387194

申请日：2010-03-18

申请人： Akira Sakai

发明人： Akira Sakai

IPC分类号： G02F1/13363 ,  G02F1/1335 ,  G02F1/1337 ,  G02B27/28

CPC分类号： G02B27/286 ,  G02F1/133502 ,  G02F1/133634 ,  G02F2001/133541 ,  G02F2001/133638 ,  G02F2001/133742 ,  G02F2001/133757 ,  G02F2413/02 ,  G02F2413/03 ,  G02F2413/08

摘要： The present invention provides a circularly polarizing VA mode liquid crystal display device having an excellent gray scale viewing angle from an intermediate gray scale to a high gray scale at an azimuth angle of 45°. The liquid crystal display device according to the present invention includes: a first polarizer; a first λ/4 plate; liquid crystal cell; a second λ/4 plate; and a second polarizer in this order, wherein when an azimuth of an absorption axis of the second polarizer is defined as 0°, an in-plane slow axis of the second λ/4 plate forms an angle of approximately 45°; an in-plane slow axis of the first λ/4 plate forms an angle of approximately 135°; the absorption axis of the first polarizer forms an angle of approximately 90°, and wherein a display brightness is varied by changing an alignment state of liquid crystal molecules in a liquid crystal layer from a state that the liquid crystal molecules are approximately vertically aligned to a substrate surface, to a state that the liquid crystal molecules are tilted to the substrate surface; and the liquid crystal layer has a domain in which the liquid crystal molecules are tilted in an azimuth angle range of 12.5° to 32.5°, a domain in which the liquid crystal molecules are tilted in an azimuth angle range of 102.5° to 122.5°, and a domain in which the liquid crystal molecules are tilted in an azimuth angle range of 192.5° to 212.5°, and a domain in which the liquid crystal molecules are tilted in an azimuth angle range of 282.5° to 302.5°.

摘要翻译： 本发明提供一种圆偏振VA模式液晶显示装置，其具有从中间灰度到45度方位角的高灰度级的优异的灰度视角。 根据本发明的液晶显示装置包括：第一偏振器; 第一个λ/ 4板; 液晶电池; 第二个λ/ 4板; 和第二偏振器，其中当第二偏振器的吸收轴的方位角定义为0°时，第二λ/ 4板的面内慢轴形成大约45°的角度; 第一λ/ 4板的平面内慢轴形成约135°的角度; 第一偏振片的吸收轴形成大约90°的角度，其中通过从液晶分子近似垂直对准的状态改变液晶层中的液晶分子的取向状态来改变显示亮度 衬底表面，使得液晶分子倾斜到衬底表面的状态; 并且液晶层具有其中液晶分子在方位角范围为12.5°至32.5°的范围内倾斜的结构域，其中液晶分子在102.5°至122.5°的方位角范围内倾斜， 以及其中液晶分子在192.5°至212.5°的方位角范围内倾斜的域和液晶分子在282.5°至302.5°的方位角范围内倾斜的区域。

公开(公告)号：US20150120161A1

公开(公告)日：2015-04-30

申请号：US14389524

申请日：2013-03-27

申请人： Yusuke Kamiya ,  Akira Sakai ,  Kiyoyuki Uchida ,  Masaki Maruyama ,  Yoshio Masuda ,  Hiroaki Niino ,  Takashi Kurokawa

发明人： Yusuke Kamiya ,  Akira Sakai ,  Kiyoyuki Uchida ,  Masaki Maruyama ,  Yoshio Masuda ,  Hiroaki Niino ,  Takashi Kurokawa

IPC分类号： B60T11/16 ,  B60T7/08

CPC分类号： B60T11/165 ,  B60T7/042 ,  B60T7/085 ,  B60T8/4077 ,  B60T13/662 ,  B60T13/686

摘要： When a brake switch is switched from OFF to ON, current is applied to a brake ECU, and a command to switch a master cylinder from a second state to a first state is issued after a lapse of preparation time, so that switching-time change suppression control is performed. A reservoir shutoff valve is closed, and duty control is performed on a communication control valve. The duty ratio is set to 1 when a switching-time control duration expires, and the communication control valve is placed in an open position, to establish the first state. Thus, since the communication control valve is duty-controlled during switching from the second state to the first state, change in the hydraulic pressure of an input chamber is suppressed, and change of the operating feeling is suppressed.

摘要翻译： 当制动开关从OFF切换到ON时，电流被施加到制动ECU，并且在准备时间过去之后发出将主缸从第二状态切换到第一状态的命令，从而切换时间改变 进行抑制控制。 关闭一个油藏截止阀，在通讯控制阀上执行占空比控制。 当切换时间控制持续时间到期时，将占空比设定为1，并且将通信控制阀置于打开位置，以建立第一状态。 因此，由于在从第二状态切换到第一状态时对通信控制阀进行占空比控制，所以抑制了输入室的液压的变化，抑制了操作感的变化。

公开(公告)号：US08531765B2

公开(公告)日：2013-09-10

申请号：US13129535

申请日：2009-08-05

申请人： Akira Sakai ,  Kazuyoshi Sakuragi

发明人： Akira Sakai ,  Kazuyoshi Sakuragi

IPC分类号： G02B5/30

CPC分类号： G02B5/3083 ,  G02F1/133502 ,  G02F1/13363 ,  G02F2001/133562 ,  G02F2001/133635 ,  G02F2001/133638 ,  G02F2413/04 ,  G02F2413/08

摘要： The present invention provides at low cost a display device with superior visibility and high contrast ratio even in a bright room environment through a reduction in the undesired reflection, not only of the incident outside light from the normal direction, but also of the outside incident light from an oblique direction. The present invention is a circularly polarizing plate including a polarizer and a λ/4 plate, and the aforementioned circularly polarizing plate includes an anti-reflective layer, the aforementioned polarizer, a birefringent layer, and the aforementioned λ/4 plate which are laminated in this order, the NZ coefficient of the aforementioned birefringent layer satisfies NZ 0.9, and the in-plane slow axis of the aforementioned λ/4 plate intersects the absorption axis of the aforementioned polarizer.

摘要翻译： 本发明以低成本提供即使在明亮的房间环境中也能够通过减少不正常反射而具有优异的可视性和高对比度的显示装置，而不仅仅是从正常方向入射的外部光，而且外部的入射光 从斜方向。 本发明是一种包括偏振片和λ/ 4板的圆偏振片，上述圆偏振片包括抗反射层，上述偏振片，双折射层和上述λ/ 4板， 该顺序，上述双折射层的NZ系数满足NZ <0.1，上述双折射层的面内快轴与上述偏振片的吸收轴正交，上述λ/ 4板的NZ系数满足NZ > 0.9，并且上述λ/ 4板的面内慢轴与上述偏振片的吸收轴相交。

公开(公告)号：US20130083261A1

公开(公告)日：2013-04-04

申请号：US13640124

申请日：2011-03-03

申请人： Takahiro Nakahara ,  Shun Ueki ,  Kozo Nakamura ,  Akira Sakai

发明人： Takahiro Nakahara ,  Shun Ueki ,  Kozo Nakamura ,  Akira Sakai

IPC分类号： G02B27/26

CPC分类号： G02B27/26 ,  G02B27/2264 ,  G03B35/26 ,  H04N13/341 ,  H04N2213/008

摘要： The present invention provides active shutter glasses including shutters in which orientations of their components are freely determined, and provides a stereoscopic image projection system. The present invention provides active shutter glasses for a stereoscopic image projection system, the active shutter glasses comprising: a right-eye shutter; and a left-eye shutter, wherein the right-eye shutter and the left-eye shutter each include a liquid crystal layer and a linear polarizing element, at least one of the right-eye shutter and the left-eye shutter includes a layer adopted to change a vibration direction of polarized light, the linear polarizing element is provided at the outer side of the liquid crystal layer, and the layer adapted to change a vibration direction of polarized light is provided at the outer side of the linear polarizing element.

摘要翻译： 本发明提供了主动式快门眼镜，其包括快门，其中它们的部件的取向被自由地确定，并提供立体图像投影系统。 本发明提供了一种用于立体图像投影系统的主动快门眼镜，所述主动快门眼镜包括：右眼快门; 和左眼快门，其中右眼快门和左眼快门各自包括液晶层和线性偏振元件，右眼快门和左眼快门中的至少一个包括采用的层 为了改变偏振光的振动方向，在液晶层的外侧设置线偏振元件，在线偏振元件的外侧设置适合于改变偏振光的振动方向的层。