A disclosed scanning electron microscope (SEM) is intended to prevent deterioration of resolution due to increase in off-axis aberration resulting from a deviation of a primary electron bean from the optical axis of the microscope. An example of the SEM has an image shifting deflector system including two deflectors disposed respectively at upper and lower stages. The deflector at the lower stage is a multipole electrostatic deflecting electrode and is disposed in an objective. Even if the distance of image shifting is great, an image of a high resolution can be formed, and dimensions can be measured in a high accuracy. The SEM is able to achieve precision inspection at a high throughput when applied to inspection in semiconductor device fabricating processes that process a wafer having a large area and provided with very minute circuit elements.