A storage node contact forming method and structure reduces the number of processes required by the conventional art and increases a critical dimension of a storage node to prevent a leaning phenomenon and reduce a manufacturing cost of semiconductor memory devices. The method includes preparing a semiconductor substrate that involves at least one contact pad contacted with an active region of a memory cell transistor through an insulation layer. The method also includes forming a storage node contact of T-shape, the storage node contact being composed of a lower region contacted with an upper part of the contact pad, and an upper region that is extended to a gate length direction of the memory cell transistor and that is formed as a size larger than a size of the lower region, in order to electrically connect the contact pad with a storage node to be formed in a later process.