发明授权
US07078300B2 Thin germanium oxynitride gate dielectric for germanium-based devices
失效
用于锗基器件的薄氮氧化锗栅极电介质
- 专利标题: Thin germanium oxynitride gate dielectric for germanium-based devices
- 专利标题(中): 用于锗基器件的薄氮氧化锗栅极电介质
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申请号: US10672631申请日: 2003-09-27
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公开(公告)号: US07078300B2公开(公告)日: 2006-07-18
- 发明人: Evgeni Gousev , Huiling Shang , Christopher P. D'Emic , Paul M. Kozlowski
- 申请人: Evgeni Gousev , Huiling Shang , Christopher P. D'Emic , Paul M. Kozlowski
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 George Sai-Halasz; Robert M. Trepp
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
A method for producing thin, below 6 nm of equivalent oxide thickness, germanium oxynitride layer on Ge-based materials for use as gate dielectric is disclosed. The method involves a two step process. First, nitrogen is incorporated in a surface layer of the Ge-based material. Second, the nitrogen incorporation is followed by an oxidation step. The method yields excellent thickness control of high quality gate dielectrics for Ge-based field effect devices, such as MOS transistors. Structures of devices having the thin germanium oxynitride gate dielectric and processors made with such devices are disclosed, as well.