发明授权
- 专利标题： Gallium nitride crystals and wafers and method of making
- 专利标题（中）： 氮化镓晶体和晶圆及其制造方法
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申请号： US11010507申请日： 2004-12-13
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公开(公告)号： US07078731B2公开(公告)日： 2006-07-18
- 发明人: Mark Philip D'Evelyn , Dong-Sil Park , Steven Francis LeBoeuf , Larry Burton Rowland , Kristi Jean Narang , Huicong Hong , Stephen Daley Arthur , Peter Micah Sandvik
- 申请人： Mark Philip D'Evelyn , Dong-Sil Park , Steven Francis LeBoeuf , Larry Burton Rowland , Kristi Jean Narang , Huicong Hong , Stephen Daley Arthur , Peter Micah Sandvik
- 申请人地址： US NY Niskayuna
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： US NY Niskayuna
- 代理商 Shawn A. McClintic; William E. Powell, III
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A GaN crystal having up to about 5 mole percent of at least one of aluminum, indium, and combinations thereof. The GaN crystal has at least one grain having a diameter greater than 2 mm, a dislocation density less than about 104 cm−2, and is substantially free of tilt boundaries.
公开/授权文献
- US20050098095A1 Gallium nitride crystals and wafers and method of making 公开/授权日：2005-05-12
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