发明授权
- 专利标题： Field effect transistor semiconductor device
- 专利标题（中）： 场效应晶体管半导体器件
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申请号： US10834362申请日： 2004-04-29
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公开(公告)号： US07078743B2公开(公告)日： 2006-07-18
- 发明人: Tomohiro Murata , Yutaka Hirose , Yoshito Ikeda , Tsuyoshi Tanaka , Kaoru Inoue , Daisuke Ueda , Yasuhiro Uemoto
- 申请人： Tomohiro Murata , Yutaka Hirose , Yoshito Ikeda , Tsuyoshi Tanaka , Kaoru Inoue , Daisuke Ueda , Yasuhiro Uemoto
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2003-136980 20030515
- 主分类号： H01L31/0328
- IPC分类号： H01L31/0328
摘要：
A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1-xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1-yN; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.
公开/授权文献
- US20050001235A1 Semiconductor device 公开/授权日：2005-01-06
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