- 专利标题: High frequency power amplifier circuit
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申请号: US11227160申请日: 2005-09-16
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公开(公告)号: US07078974B2公开(公告)日: 2006-07-18
- 发明人: Kouichi Matsushita , Tomio Furuya , Fuminori Morisawa , Takayuki Tsutsui , Nobuhiro Matsudaira
- 申请人: Kouichi Matsushita , Tomio Furuya , Fuminori Morisawa , Takayuki Tsutsui , Nobuhiro Matsudaira
- 申请人地址: JP Tokyo JP Kanagawa
- 专利权人: Renesas Technology Corp.,Hitachi Communication Systems, Inc.
- 当前专利权人: Renesas Technology Corp.,Hitachi Communication Systems, Inc.
- 当前专利权人地址: JP Tokyo JP Kanagawa
- 代理机构: Mattingly, Stanger, Malur & Brundidge, P.C.
- 优先权: JP2001-198308 20010629
- 主分类号: H03G3/10
- IPC分类号: H03G3/10
摘要:
A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.
公开/授权文献
- US20060006944A1 High frequency power amplifier circuit 公开/授权日:2006-01-12
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