摘要:
A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.
摘要:
A high-frequency power amplification electronic part is disclosed which comprises a power amplifier circuit and a bias control circuit, the power amplifier circuit having a plurality of amplifier stages for amplifying an input high-frequency signal, the bias control circuit acting to bias the power amplifier circuit. The power amplifier circuit controls output power in accordance with input power that is varied while a gain of the power amplifier circuit is being fixed by either a bias current or a bias voltage supplied from the bias control circuit. The bias control circuit supplies at least two diode characteristic elements with a predetermined current each in order to generate at least two voltages demonstrating different temperature characteristics, the bias control circuit further using the generated voltages as a basis for generating either a plurality of bias currents or a plurality of bias voltages having a desired temperature-dependent rate of change each, the generated bias currents or bias voltages being fed to each of the plural amplifier stages constituting the power amplifier circuit.
摘要:
In radio communication system that is able to transmit in two or more modulation modes, e.g., one modulation mode when phase shifts are performed and another modulation mode when phase shifts and amplitude shifts are performed, the disclosed invention can avoid that receiving band noise becomes so great not to conform to the GSM standards' prescription for such noise in a high voltage region of the power supply voltage, even when the output power is controlled by changing the amplitude of the input signal to the power amplifier circuitry while fixing the bias voltages to be applied to the power amplifying transistors. When the output power is controlled as above, in the modulation mode (GSM mode) when phase shifts are performed, idle currents flowing across the power amplifying transistors are regulated, depending on the power supply voltage, i.e., the idle currents are decreased when the power supply voltage is high and increased when the power supply voltage is low.
摘要:
A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.
摘要:
A high-frequency power amplification electronic part is disclosed which comprises a power amplifier circuit and a bias control circuit, the power amplifier circuit having a plurality of amplifier stages for amplifying an input high-frequency signal, the bias control circuit acting to bias the power amplifier circuit. The power amplifier circuit controls output power in accordance with input power that is varied while a gain of the power amplifier circuit is being fixed by either a bias current or a bias voltage supplied from the bias control circuit. The bias control circuit supplies at least two diode characteristic elements with a predetermined current each in order to generate at least two voltages demonstrating different temperature characteristics, the bias control circuit further using the generated voltages as a basis for generating either a plurality of bias currents or a plurality of bias voltages having a desired temperature-dependent rate of change each, the generated bias currents or bias voltages being fed to each of the plural amplifier stages constituting the power amplifier circuit.
摘要:
A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.
摘要:
The present invention provides a high frequency amplifier using a power supply voltage regulate circuit for the purpose of compensating for variations in power supply voltage. The high frequency amplifier comprises three-stage power amplifiers which amplify an input signal and output the amplified signal, a bias circuit which supplies bias voltages for controlling these power amplifiers, a regulate circuit which compensates for variations in noise or gain with respect to the variations in the power supply voltage for driving the power amplifiers, etc. The regulate circuit holds constant an output voltage Vddc with respect to variations in power supply voltage Vdd and outputs the constant-held output voltage Vddc as a power supply voltage for the power amplifiers.
摘要:
A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.
摘要:
A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.
摘要:
An RF power module in which operating voltage is controlled by a control signal based on amplitude information includes a temperature detecting device which is provided over a semiconductor chip formed with an amplifying transistor or a semiconductor chip formed with a power source circuit; and a detector having a hysteresis characteristic which is provided over the semiconductor chip formed with the device or a different semiconductor chip, applies a bias to the temperature detecting device to compare the state of the device at two reference levels, outputs a signal indicating abnormality when judging that the temperature of the semiconductor chip formed with the temperature detecting device is above a predetermined temperature, and outputs a signal indicating normality when judging that the temperature of the semiconductor chip is below a second predetermined temperature lower than the predetermined temperature.