发明授权
- 专利标题: Antenna structure for inductively coupled plasma generator
- 专利标题(中): 电感耦合等离子体发生器的天线结构
-
申请号: US10766665申请日: 2004-01-27
-
公开(公告)号: US07079085B2公开(公告)日: 2006-07-18
- 发明人: Young-Kwan Lee , Sang-Won Lee , Sae-Hoon Uhm
- 申请人: Young-Kwan Lee , Sang-Won Lee , Sae-Hoon Uhm
- 申请人地址: KR
- 专利权人: Plasmart Co. Ltd.
- 当前专利权人: Plasmart Co. Ltd.
- 当前专利权人地址: KR
- 代理机构: St. Onge Steward Johnston & Reens LLC
- 主分类号: H01Q21/00
- IPC分类号: H01Q21/00 ; H01Q11/12 ; H01J7/24
摘要:
An antenna structure for an inductively coupled plasma generator suitable for processing large-diameter wafers or large, flat-panel display devices by making a plasma density distribution uniform and symmetrical with respect to a rotating direction inside a circular or rectangular chamber in which a wafer is processed. In the antenna structure having a powered end to which RF power is applied and a ground end connected to the ground, at least two loop antenna elements are disposed electrically in parallel with each other, the powered ends and ground ends of the respective antennas are disposed symmetrically with respect to the center of the antennas, and the antennas crossing each other such that the powered ends and ground ends thereof are disposed at a part far from a chamber and central parts thereof are disposed at a part close to the chamber.
公开/授权文献
信息查询