Invention Grant
- Patent Title: Antenna structure for inductively coupled plasma generator
- Patent Title (中): 电感耦合等离子体发生器的天线结构
-
Application No.: US10766665Application Date: 2004-01-27
-
Publication No.: US07079085B2Publication Date: 2006-07-18
- Inventor: Young-Kwan Lee , Sang-Won Lee , Sae-Hoon Uhm
- Applicant: Young-Kwan Lee , Sang-Won Lee , Sae-Hoon Uhm
- Applicant Address: KR
- Assignee: Plasmart Co. Ltd.
- Current Assignee: Plasmart Co. Ltd.
- Current Assignee Address: KR
- Agency: St. Onge Steward Johnston & Reens LLC
- Main IPC: H01Q21/00
- IPC: H01Q21/00 ; H01Q11/12 ; H01J7/24

Abstract:
An antenna structure for an inductively coupled plasma generator suitable for processing large-diameter wafers or large, flat-panel display devices by making a plasma density distribution uniform and symmetrical with respect to a rotating direction inside a circular or rectangular chamber in which a wafer is processed. In the antenna structure having a powered end to which RF power is applied and a ground end connected to the ground, at least two loop antenna elements are disposed electrically in parallel with each other, the powered ends and ground ends of the respective antennas are disposed symmetrically with respect to the center of the antennas, and the antennas crossing each other such that the powered ends and ground ends thereof are disposed at a part far from a chamber and central parts thereof are disposed at a part close to the chamber.
Public/Granted literature
- US20040223579A1 Antenna structure for inductively coupled plasma generator Public/Granted day:2004-11-11
Information query