发明授权
- 专利标题: Method for operating a memory device
- 专利标题(中): 操作存储器件的方法
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申请号: US10747217申请日: 2003-12-30
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公开(公告)号: US07079420B2公开(公告)日: 2006-07-18
- 发明人: Assaf Shappir , Dror Avni , Boaz Eitan
- 申请人: Assaf Shappir , Dror Avni , Boaz Eitan
- 申请人地址: IL Netanya
- 专利权人: Saifun Semiconductors Ltd.
- 当前专利权人: Saifun Semiconductors Ltd.
- 当前专利权人地址: IL Netanya
- 主分类号: G11C16/04
- IPC分类号: G11C16/04
摘要:
A method and a system for operating bits of memory cells in a memory array, the method including applying a first operating pulse to a terminal of a first cell, the first operating pulse is intended to place the first cell into a predefined state; and applying a second operating pulse to a terminal of a second cell in the set, the second operating pulse is intended to place the second cell to the predefined state, and the pulse characteristics of the second operating pulse are a function of the response of the first cell to the first operating pulse.
公开/授权文献
- US20050058005A1 Method for operating a memory device 公开/授权日:2005-03-17
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