The present invention provides a method for programming a selected bit in a memory cell of a non-volatile dual bit flash memory device. The method includes applying a positive voltage to a bit line associated with the selected bit and applying another positive voltage to a word line associated with the selected bit. Next, a positive voltage is applied to a second bit line associated with a complementary bit that shares the memory cell with the selected bit. A positive voltage is also applied to a third bit line that is adjacent to the second bit line and removed from the bit line associated with the selected bit by the second bit line. Applying a negative voltage to the word line then erases the complementary bit, but not its adjacent non-selected bit. The programming cycle is repeated until a desired threshold voltage is obtained.