Invention Grant
US07079444B2 Memory system using simultaneous bi-directional input/output circuit on an address bus line
有权
存储系统在地址总线上同时使用双向输入/输出电路
- Patent Title: Memory system using simultaneous bi-directional input/output circuit on an address bus line
- Patent Title (中): 存储系统在地址总线上同时使用双向输入/输出电路
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Application No.: US10974951Application Date: 2004-10-28
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Publication No.: US07079444B2Publication Date: 2006-07-18
- Inventor: Jung-bae Lee
- Applicant: Jung-bae Lee
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine Francos & Whitt, PLLC
- Priority: KR10-2004-0013010 20040226
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
A memory system using a simultaneous bi-directional input/output (SBD I/O) circuit on an address bus line. The memory system includes a first address I/O circuit and a second address I/O circuit, which are connected by the address bus line. The first address I/O circuit may be included in a controller, transmits an address signal to the address bus line, and receives an acknowledgement signal from the address bus line. The second address I/O circuit may be included in a memory device (such as dynamic random access memory (DRAM)), transmits the acknowledgement signal to the address bus line, and receives the address signal from the address bus line. The memory system may also include an error correction circuit unit which generates the acknowledgement signal indicating if an error is present in the address signal received by the second address I/O circuit.
Public/Granted literature
- US20050190634A1 Memory system using simultaneous bi-directional input/output circuit on an address bus line Public/Granted day:2005-09-01
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