发明授权
- 专利标题: Semiconductor laser device and method of manufacturing the same
- 专利标题(中): 半导体激光器件及其制造方法
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申请号: US10743944申请日: 2003-12-24
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公开(公告)号: US07079563B2公开(公告)日: 2006-07-18
- 发明人: Mamoru Miyachi , Atsushi Watanabe , Hirokazu Takahashi , Yoshinori Kimura
- 申请人: Mamoru Miyachi , Atsushi Watanabe , Hirokazu Takahashi , Yoshinori Kimura
- 申请人地址: JP Tokyo
- 专利权人: Pioneer Corporation
- 当前专利权人: Pioneer Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Arent Fox PLLC
- 优先权: JP2002-374636 20021225
- 主分类号: H01S5/00
- IPC分类号: H01S5/00
摘要:
An improved semiconductor laser device is provided which has a small distance between laser light emitting spots. Such laser device comprises i) a first light emitting element including a laser oscillation section provided with a ridge waveguide and formed by forming a group-III nitride semiconductor film on a substrate, an insulating layer and an ohmic electrode layer, ii) a second light emitting element including a laser oscillation section provided with a waveguide and formed by forming III–V compound semiconductor film, an insulating layer and an ohmic electrode layer. By virtue of the adhesive metal layer interposed between the two ohmic electrode layers, the two laser oscillation sections are combined together, thereby forming the improved semiconductor laser device which has a small distance between laser light emitting spots of the two laser oscillation sections.