发明授权
- 专利标题： Method and driver for programming phase change memory cell
- 专利标题（中）： 用于编程相变存储单元的方法和驱动程序
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申请号： US10845065申请日： 2004-05-14
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公开(公告)号： US07082051B2公开(公告)日： 2006-07-25
- 发明人: Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
- 申请人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2003-0056011 20030813
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; H01L29/02 ; H01L31/0376
摘要：
In the method of programming a phase change memory cell, having a lower resistive state and a higher resistive state, to the lower resistive state, the memory cell is heated to first temperature. Subsequently, the memory cell is heated to second temperature, which is greater than the first temperature.
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