发明授权
- 专利标题: Method for manufacturing resonant device
- 专利标题(中): 制造谐振装置的方法
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申请号: US10494640申请日: 2003-08-20
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公开(公告)号: US07083740B2公开(公告)日: 2006-08-01
- 发明人: Masaya Nakatani , Hirofumi Tajika
- 申请人: Masaya Nakatani , Hirofumi Tajika
- 申请人地址: JP Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: Wenderoth, Lind & Ponack, L.L.P.
- 优先权: JP2002-240134 20020821
- 国际申请: PCT/JP03/10492 WO 20030820
- 国际公布: WO2004/019426 WO 20040304
- 主分类号: B34C1/22
- IPC分类号: B34C1/22
摘要:
A piezoelectric member and an electrode are formed over a silicon substrate. The piezoelectric member and the electrode are patterned by photolithography. The silicon substrate is etched to form a body. A protective film is formed on at least one surface of the body. Another surface having no protective film thereon is etched to obtain a resonant device. The body is etched in its thickness direction accurately while a resonance frequency of the body is measured. The manufacturing processes allow the resonance frequency and a gap frequency of the resonant device to be adjusted to predetermined values.
公开/授权文献
- US20050000934A1 Method for manufacturing resonant device 公开/授权日:2005-01-06
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