Invention Grant
- Patent Title: Method of manufacturing a semiconductor device with outline of cleave marking regions and alignment or registration features
- Patent Title (中): 具有切割标记区域和对准或配准特征的轮廓的半导体器件的制造方法
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Application No.: US10492061Application Date: 2002-10-07
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Publication No.: US07083994B2Publication Date: 2006-08-01
- Inventor: James O'Gorman
- Applicant: James O'Gorman
- Applicant Address: IE Dublin
- Assignee: Eblana Photonics Limited
- Current Assignee: Eblana Photonics Limited
- Current Assignee Address: IE Dublin
- Agency: Kusner & Jaffe
- Priority: GB0124427.6 20011011
- International Application: PCT/IE02/00141 WO 20021007
- International Announcement: WO03/044871 WO 20030530
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
This invention generally relates to semiconductor devices, for example lasers and more particularly to single frequency lasers and is directed at overcoming problems associated with the manufacture of these devices. In particular, a laser device is provided formed on a substrate having a plurality of layers (1,2,3,4,5), the laser device comprising at least one waveguide (for example a ridge) established by the selective removal of sections of at least one of the layers. Wherein alignment features are provided on the device to facilitate subsequent placement.
Public/Granted literature
- US20050032264A1 Method of manufacturing a semiconductor device Public/Granted day:2005-02-10
Information query
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