Method of manufacturing a semiconductor device with outline of cleave marking regions and alignment or registration features
    1.
    发明授权
    Method of manufacturing a semiconductor device with outline of cleave marking regions and alignment or registration features 有权
    具有切割标记区域和对准或配准特征的轮廓的半导体器件的制造方法

    公开(公告)号:US07083994B2

    公开(公告)日:2006-08-01

    申请号:US10492061

    申请日:2002-10-07

    Applicant: James O'Gorman

    Inventor: James O'Gorman

    Abstract: This invention generally relates to semiconductor devices, for example lasers and more particularly to single frequency lasers and is directed at overcoming problems associated with the manufacture of these devices. In particular, a laser device is provided formed on a substrate having a plurality of layers (1,2,3,4,5), the laser device comprising at least one waveguide (for example a ridge) established by the selective removal of sections of at least one of the layers. Wherein alignment features are provided on the device to facilitate subsequent placement.

    Abstract translation: 本发明一般涉及半导体器件,例如激光器,更具体地涉及单频激光器,并且涉及克服与这些器件的制造相关的问题。 特别地,提供了形成在具有多个层(1,2,3,4,5)的基板上的激光装置,激光装置包括至少一个通过选择性地去除部分而形成的波导(例如脊) 的至少一个层。 其中在设备上提供对准特征以便于随后的放置。

    Method of manufacturing a semiconductor device
    2.
    发明申请
    Method of manufacturing a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US20050032264A1

    公开(公告)日:2005-02-10

    申请号:US10492061

    申请日:2002-10-07

    Applicant: James O'Gorman

    Inventor: James O'Gorman

    Abstract: This invention generally relates to semiconductor devices, for example lasers and more particularly to single frequency lasers and is directed at overcoming problems associated with the manufacture of these devices. In particular, a laser device is provided formed on a substrate having a plurality of layers (1,2,3,4,5), the laser device comprising at least one waveguide (for example a ridge) established by the selective removal of sections of at least one of the layers. Wherein alignment features are provided on the device to facilitate subsequent placement.

    Abstract translation: 本发明一般涉及半导体器件,例如激光器,更具体地涉及单频激光器,并且涉及克服与这些器件的制造相关的问题。 特别地,提供了形成在具有多个层(1,2,3,4,5)的基板上的激光装置,激光装置包括至少一个通过选择性地去除部分而形成的波导(例如脊) 的至少一个层。 其中在设备上提供对准特征以便于随后的放置。

    Semiconductor photodetector
    3.
    发明申请
    Semiconductor photodetector 失效
    半导体光电探测器

    公开(公告)号:US20050104064A1

    公开(公告)日:2005-05-19

    申请号:US10506106

    申请日:2003-03-03

    Abstract: A semiconductor photodetector (1) for detecting short duration laser light pulses of predetermined wavelength in a light signal (2) comprises a micro-resonator (3) of vertical Fabry-Perot construction having a Bragg mirror pair, namely, a front mirror (5) and a rear mirror (6) with an active region (8) located between the front and rear mirrors (5,6). An N-type substrate (11) supports the rear mirror (6). The light signal (2) is directed into the active region (8) through the front mirror (5) while a pump beam (17) is directed into the active region (8) at an end (18) thereof. The spacing between the front and rear mirrors (5,6) is such as to cause light of the predetermined wavelength to resonate between the mirrors (5,6). The semiconductor material of the active region (8) is selected so that one photon from each of the light signal (2) and the pump beam (17) are required to transfer one electron from a valence band (21) of the active region (8) across a bandgap (22) to a conduction band (20) so that the active region operates on the principle of Two-Photon Absorption. On the active region (8) being simultaneously subjected to the pump beam and light of the predetermined wavelength in the light signal (2) electrons are transferred by Two-Photon Absorption from the valence band (21) to the conduction band (20), thus causing a change in the voltage developed across the active region (8). The change in voltage is detected between an electrode (15) on the substrate (11) and electrodes (8) on the front mirror (5) thereby indicating the presence of light of the predetermined wavelength in the light signal (2).

    Abstract translation: 一种用于在光信号(2)中检测预定波长的短持续时间激光脉冲的半导体光电检测器(1)包括具有布拉格光束对的垂直法布里 - 珀罗结构的微谐振器(3),即前反射镜 )和具有位于前后反射镜(5,6)之间的有源区域(8)的后反射镜(6)。 N型基板(11)支撑后反射镜(6)。 光信号(2)通过前反射镜(5)被引导到有源区域(8)中,而泵浦光束(17)在其端部(18)处被引导到有源区域(8)中。 前后反射镜(5,6)之间的间隔使得预定波长的光在反射镜(5,6)之间共振。 有源区域(8)的半导体材料被选择为使得来自光信号(2)和泵浦光束(17)中的每一个的一个光子需要从有源区域的价带(21)传送一个电子 8)穿过带隙(22)到导带(20),使得有源区域以双光子吸收原理工作。 在有源区域(8)同时经受泵浦光束和光信号(2)中的预定波长的光,电子通过双光子吸收从价带(21)转移到导带(20), 从而导致在有源区(8)上产生的电压的变化。 在基板(11)上的电极(15)和前反射镜(5)上的电极(8)之间检测电压变化,从而指示在光信号(2)中存在预定波长的光。

    Semiconductor laser and method of manufacture
    4.
    发明申请
    Semiconductor laser and method of manufacture 有权
    半导体激光器及其制造方法

    公开(公告)号:US20070211775A1

    公开(公告)日:2007-09-13

    申请号:US11328517

    申请日:2006-01-09

    Abstract: Disclosed is a laser (10) comprising a lasing cavity with a lasing medium and primary optical feedback means in the form of a facet (17) at either end of the cavity, the laser cavity defining a longitudinally extending optical path; and secondary optical feedback means formed by a plurality of refractive index perturbations (16, 22) in the laser cavity, each perturbation defining two interfaces (20, 21); characterised in that, for at least one perturbation, only one of the two interfaces contributes to optical feedback along the optical path. The present invention relaxes the lithographic tolerances for making single longitudinal mode devices and improves performance characteristics.

    Abstract translation: 公开了一种激光器(10),其包括具有激光介质的激光腔和在空腔的任一端处具有小面(17)形式的主光学反馈装置,激光腔限定纵向延伸的光路; 以及由所述激光腔中的多个折射率扰动(16,22)形成的二次光反馈装置,每个扰动限定两个接口(20,21); 其特征在于,对于至少一个扰动,两个界面中只有一个有助于沿光路的光学反馈。 本发明放宽了用于制造单个纵向模式装置的光刻公差,并提高了性能特征。

    Single mode laser
    5.
    发明申请
    Single mode laser 审中-公开
    单模激光

    公开(公告)号:US20070189349A1

    公开(公告)日:2007-08-16

    申请号:US11656931

    申请日:2007-01-23

    CPC classification number: H01S5/12 H01S5/028 H01S5/0654 H01S5/1228

    Abstract: A laser comprising a lasing cavity, having a lasing medium and primary optical feedback means in the form of a facet at either end of the cavity is described. The laser includes secondary optical feedback means in the form of one or more effective refractive index perturbations in the lasing cavity with at least one of the facets configured to preferentially reflects a specific wavelength or band of wavelengths. A method of manufacturing such a laser is also described as is a method of suppressing side modes in a lasing device.

    Abstract translation: 描述了包括激光腔的激光器,其具有激光介质和在腔的任一端处具有小面形式的主光学反馈装置。 激光器包括激光腔中一个或多个有效折射率扰动形式的二次光学反馈装置,其中至少一个面被配置为优先反射特定的波长或波长带。 制造这种激光器的方法也被描述为抑制激光装置中的侧面模式的方法。

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