发明授权
US07084034B2 High voltage MOS-gated power device and related manufacturing process
有权
高压MOS门控功率器件及相关制造工艺
- 专利标题： High voltage MOS-gated power device and related manufacturing process
- 专利标题（中）： 高压MOS门控功率器件及相关制造工艺
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申请号： US10430771申请日： 2003-05-06
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公开(公告)号： US07084034B2公开(公告)日： 2006-08-01
- 发明人: Ferruccio Frisina
- 申请人： Ferruccio Frisina
- 申请人地址： IT Agrate Brianza
- 专利权人： STMicroelectronics S.r.l.
- 当前专利权人： STMicroelectronics S.r.l.
- 当前专利权人地址： IT Agrate Brianza
- 代理机构： Wolf, Greenfield & Sacks, P.C.
- 代理商 Lisa K. Jorgenson; James H. Morris
- 优先权： EP98830737 19981209
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/425 ; H01L21/332
摘要：
MOS-gated power device including a plurality of elementary functional units, each elementary functional unit including a body region of a first conductivity type formed in a semiconductor material layer of a second conductivity type. A plurality of doped regions of a first conductivity type is formed in the semiconductor material layer, each one of the doped regions being disposed under a respective body region and being separated from other doped regions by portions of the semiconductor material layer.
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