发明授权
- 专利标题： Microelectromechanical device and method for producing it
- 专利标题（中）： 微机电装置及其制造方法
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申请号： US10773114申请日： 2004-02-04
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公开(公告)号： US07084502B2公开(公告)日： 2006-08-01
- 发明人: Harald Böttner , Axel Schubert , Joachim Nurnus , Martin Jagle
- 申请人： Harald Böttner , Axel Schubert , Joachim Nurnus , Martin Jagle
- 申请人地址： DE Munich unknown Munich
- 专利权人： Infineon Technologies AG,Fraunhofer - Gesellschaft zur Forde - rung der angewandten Forschung e. V.
- 当前专利权人： Infineon Technologies AG,Fraunhofer - Gesellschaft zur Forde - rung der angewandten Forschung e. V.
- 当前专利权人地址： DE Munich unknown Munich
- 代理机构： Dickstein, Shapiro, Morin & Oshinsky, LLP.
- 优先权： DE10305411 20030602
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/00 ; H01L21/76
摘要：
A microelectromechanical device and a method for producing it having at least one layer on a substrate, in particular a thermoelectric layer on a substrate, the thermal expansion coefficient of the at least one layer and the thermal expansion coefficient of the substrate differing greatly. The at least one layer is coupled to at least one stress reduction means for the targeted reduction of lateral mechanical stresses present in the layer. This achieves a stress-free layer or enables stress-free growth.