Microelectromechanical device and method for producing it
    1.
    发明授权
    Microelectromechanical device and method for producing it 失效
    微机电装置及其制造方法

    公开(公告)号:US07084502B2

    公开(公告)日:2006-08-01

    申请号:US10773114

    申请日:2004-02-04

    IPC分类号: H01L23/48 H01L21/00 H01L21/76

    摘要: A microelectromechanical device and a method for producing it having at least one layer on a substrate, in particular a thermoelectric layer on a substrate, the thermal expansion coefficient of the at least one layer and the thermal expansion coefficient of the substrate differing greatly. The at least one layer is coupled to at least one stress reduction means for the targeted reduction of lateral mechanical stresses present in the layer. This achieves a stress-free layer or enables stress-free growth.

    摘要翻译: 一种微机电装置及其制造方法,在基板上具有至少一层,特别是基板上的热电层,所述至少一层的热膨胀系数和基板的热膨胀系数大大不同。 至少一个层耦合到至少一个应力减小装置,用于目标地减小存在于该层中的横向机械应力。 这实现了无应力层或实现无压力生长。