Invention Grant
- Patent Title: Method and composite for decreasing charge leakage
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Application No.: US10931581Application Date: 2004-08-31
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Publication No.: US07087490B2Publication Date: 2006-08-08
- Inventor: Michael Nuttall , Garry A. Mercaldi
- Applicant: Michael Nuttall , Garry A. Mercaldi
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg, Woessner & Kluth, P.A.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A dielectric insulating composite for insulating a floating gate from a control gate in a non-volatile memory is described. A material, such as an undoped polysilicon, amorphous silicon, or amorphous polysilicon or a silicon rich nitride, is inserted in the gate structure. The oxide film that results from the oxidation of these films is relatively free from impurities. As a result, charge leakage between the floating gate and control gate is reduced.
Public/Granted literature
- US20050026370A1 Method and composite for decreasing charge leakage Public/Granted day:2005-02-03
Information query
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