发明授权
- 专利标题： Method of manufacturing a semiconductor device by irradiating with a laser beam
- 专利标题（中）： 通过照射激光来制造半导体器件的方法
-
申请号： US10133588申请日： 2002-04-29
-
公开(公告)号： US07087504B2公开(公告)日： 2006-08-08
- 发明人: Setsuo Nakajima , Aiko Shiga , Naoki Makita , Takuya Matsuo
- 申请人： Setsuo Nakajima , Aiko Shiga , Naoki Makita , Takuya Matsuo
- 申请人地址： JP Kanagawa-ken JP Osaka
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Kanagawa-ken JP Osaka
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2001-148635 20010518
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A technique for manufacturing TFTs having little dispersion in their electrical characteristics is provided. Contamination of a semiconductor film is reduced by performing oxidation processing having an organic matter removing effect, forming a clean oxide film, after removing a natural oxide film formed on a semiconductor film surface. TFTs having little dispersion in their electrical characteristics can be obtained by using the semiconductor film thus obtained in active layers of the TFTs, and the electrical properties can be improved. In addition, deterioration in productivity and throughput can be reduced to a minimum by using a semiconductor manufacturing apparatus of the present invention.
公开/授权文献
信息查询
IPC分类:
